BEng Electronic Engineering / Course details

Year of entry: 2024

Course unit details:
Microelectronic Components

Course unit fact file
Unit code EEEN20232
Credit rating 10
Unit level Level 2
Teaching period(s) Semester 2
Available as a free choice unit? No

Overview

Brief Description of the Unit:

  1. Integrated circuit process technology. Photolithography, diffusion and ion implantation doping, annealing, dielectric films, thermal growth mechanisms, chemical vapour deposition, polycrystalline silicon and silicon nitride deposition.
  2. Metal­-semiconductor junction characteristics, small signal equivalent circuit and the associated parameters.
  3. nMOS and pMOS transistors, CMOS technology, the CMOS inverter, planar fabrication of CMOS integrated circuits.
  4. MOS transistor's gate and junction capacitances.
  5. Current control in MOS transistors, modelling of the MOS transistor, regions of MOS device operation.
  6. Small signal equivalent circuits in MOSFETs and their associated parameters.
  7. State­-of-­the-­art and emerging device architectures, high­-k metal gate CMOS process, strained silicon, silicon on insulator, FinFET devices.

Pre/co-requisites

Unit title Unit code Requirement type Description
Electronic Materials EEEN10021 Pre-Requisite Compulsory
Electronic Circuit Design I EEEN10232 Pre-Requisite Compulsory
VLSI Design EEEN20272 Co-Requisite Compulsory

Aims

The course unit aims to:

  1. Introduce the key components of microelectronic devices.
  2. Introduce modern integrated circuit manufacturing techniques.
  3. Emphasise the importance of semiconductor device models.

Learning outcomes

All of the following Intended Learning Outcomes are developed and assessed. On the successful completion of the course, students will be able to:

ILO 1: Describe and evaluate the fundamental processes involved in silicon and silicon integrated circuit manufacture.

ILO 2: Describe and apply the key physical concepts necessary to explain the properties of semiconductor materials.

ILO 3: Explain metal-semiconductor junctions in terms of vacuum level, electron affinity and work function for Schottky and Ohmic contacts.

ILO 4: Explain the physics of MOS devices with the aid of energy band diagrams and space charge distribution.

ILO 5: Define and calculate the threshold voltage necessary for strong inversion in ideal, as well as non-ideal MOS devices.

ILO 6: Explain the gradual channel model describing the current control in MOSFETs and analyse small signal device equivalent circuits with associated parameters.

ILO 7: Design and explain the operation of simple CMOS logic structures including CMOS inverters.

ILO 8: Discuss and assess the enormous technical challenges presented by modern and emerging integrated circuit technologies.

Assessment methods

Method Weight
Other 4%
Written exam 80%
Report 16%

Individual Assessment: 
Online Quiz 1: 2%
Online Quiz 2: 2%

Feedback methods

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Recommended reading

Solid state electronic devices: Streetman, Ben G., author. Pearson, 2016. ISBN: 9781292060767
Microelectronic circuits: Sedra, Adel S., Oxford University Press, 2011. 
The science and engineering of microelectronic fabrication: Campbell, Stephen A., Oxford University Press, 2001. ISBN: 0195136055
Physics of semiconductor devices: Sze, S. M., Wiley, 2021. ISBN: 9781119429111

Study hours

Scheduled activity hours
Lectures 20
Practical classes & workshops 6
Tutorials 4
Independent study hours
Independent study 70

Teaching staff

Staff member Role
Leszek Majewski Unit coordinator

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